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PSMN6R4-30MLDX Datasheet
Datasheet specifications
| Datasheet's name | PSMN6R4-30MLDX |
|---|---|
| File size | 77.582 KB |
| File type | |
| Number of pages | 12 |
Download Datasheet PSMN6R4-30MLDX |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN6R4-30MLDX
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 51W
- Total Gate Charge (Qg@Vgs): 13.7nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 832pF@15V
- Continuous Drain Current (Id): 66A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 6.3mΩ@15A,10V
- Package: SOT-1210
- Manufacturer: Nexperia
